A team of researchers exploring semiconductor properties in conjunction with a novel thin oxide layer has unearthed an unforeseen source of conductivity stemming from oxygen atoms trapped within.
Scott Chambers, a materials scientist at the Department of Energy’s Pacific Northwest National Laboratory, disclosed the team’s discoveries at the American Physical Society’s Spring 2022 meeting. The study’s insights are documented in the journal Physical Review Materials.
This revelation carries significant implications for comprehending the role of thin oxide films in future semiconductor design and manufacturing. Modern electronics rely on two primary semiconductor types: n-type and p-type, determined by the electronic impurities introduced during crystal formation. While both n- and p-type silicon-based materials are prevalent in contemporary electronic devices, there is growing interest in exploring novel semiconductor variants.
“We are presenting a potent tool for investigating semiconductor structure and functionality,” Chambers remarked. “Hard X-ray photoelectron spectroscopy unveiled that oxygen atoms, impurities within the germanium, govern the material’s properties when germanium is interfaced with a specific oxide material. This finding came as a significant surprise.”
Leveraging the Diamond Light Source at the Harwell Science and Innovation Campus in Oxfordshire, England, the research team unlocked deeper insights into the electronic properties of the germanium/LSZTO system compared to conventional methods.
“Conventional techniques were hindered by the considerably higher conductivity of germanium, resulting in a virtual short circuit,” Chambers explained. “This limited our ability to probe the LSZTO film’s electronic properties and the interface between the film and the germanium, which we anticipated could hold considerable technological significance.”
